HMDS (Hexamethyldisilzan) improves adhesion of photoresists and is very often used in photolithography. Being an expert in this field amcoss offers special HMDS equipment.
Carrier station with detection
The carrier station can hold 2 carriers with a total of 50 wafers of maximum 8” in diameter. The number of carriers is automatically registered by the two detectors for lot-control.
Process chamber with HMDS vaporizer
Within the HMDS process chamber the process can be controlled and mastered at any time thanks to clever product features:
Integrated HMDS vaporizer with controlled N2 flow
Control of the HMDS concentration
Controlled HMDS exhaust
Drain valve for the HMDS tank
Touchscreen for operating amc software
As standard an IPC with touchscreen and SECS/GEM module is used to operate the amc software, for process control and simple, comfortable recipe writing.
Pressuretank with pressure control
The pressuretank for automatic HMDS refill has got integrated pressure control. The tanks sits within an overflow tray (approx. 8-9 l capacity) and is equipped with leakage control. HMDS concentration control is situated within the equipment.
Exhaust control
The machine is equipped with exhaust control.
Safety precautions
For operator safety you will find a security switch on the doors: if the equipment is being opened during operation, the HMDS process is being stopped immediately. Furthermore, all important parts are secured against explosion to make the equipment safe.
HMDS (Hexamethyldisilzan) improves adhesion of photoresists and is very often used in photolithography. Being an expert in this field amcoss offers special HMDS equipment.
Servo control
The exact positions of the nozzle and the robot handler are known at all times and are programmable on the X, Y and Z axes. Therefore, any desired position above the wafer can be targeted during the dispense process, which means that dispense rate and dispense path may be set individually.
Advantages:
Many possibilities for further future process developments, e.g. thick films and high topographies
Excellent process results, because the position of the nozzle can be repeated at any time
No adjustments necessary if substrate thickness is changed
Wafer-centring „on-the-move“
Just before reaching the coater bowl, scanners will determine the position of the wafer on the robot handler and will calculate its necessary movement for an exact centring position on the chuck. A separate positioning station and an extra handling step for positioning become unnecessary.
Increases centring precision; no inaccuracies due to additional steps
Saves space within the machine
Shortens processing time
Reduces number of components necessary
Reduces reject
No adjustments necessary with different wafer sizes
Saves costs, increases revenue!
Optional cover heating
The temperature of the additional cover heating can be set easily and controlled directly through the temperature control module, but it can also be turned off completely with the ON/OFF switch. So our customers get a compact 2-in-1-device for more flexible applications.
Deckelheizplatte
Die Temperatur der optionalen Deckelheizung ist direkt über den Temperaturregler zu steuern und kann mit dem On/Off-Schalter auch komplett ausgeschaltet werden. Damit bieten wir ein kompaktes 2-in-1-Gerät: eine Hotplate mit oder ohne Deckelheizung für flexiblere Anwendungsmöglichkeiten.
Wafer-Zentrierung „on-the-move“
Erst kurz vor dem Belackungstopf ermitteln Scanner die Lage des Wafers auf dem Roboterarm und berechnen dessen nötigen Bewegungsablauf für eine exakte Zentrierposition auf dem Chuck. Eine separate Positionierstation und ein zusätzlicher Positionierschritt sind nicht nötig.
Erhöht die Zentrierpräzision, da keine Ungenauigkeiten durch zusätzliche Wege entstehen
Spart Platz in der Maschine
Verkürzt die Durchlaufzeit
Reduziert die Anzahl an benötigten Komponenten
Reduziert den Ausschuss
Keine Anpassungen bei unterschiedlichen Wafergrößen notwendig.
Achsen mit servogesteuerter Positionierung
Die exakte Position der Düse und des Roboterarms ist jederzeit bekannt und in der X-, Y- und Z-Achse programmierbar. Während des Prozesses kann so jede beliebige Stelle über dem Wafer während dem Dispense angefahren werden, d.h Dispense-Rate und -Pfad sind individuell einzustellen.
Vorteile:
Viele Möglichkeiten für zukünftige Prozessweiterentwicklungen, z.B. Dickschichten und hohe Topografien
Hervorragende Prozessergebnisse, da die Düsenposition jederzeit repetierbar ist
Keine Anpassungen notwendig bei veränderter Substratdicke
